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Topologically Nontrivial Phase-Change Compound GeSb2Te4

Nurmamat, M; Okamoto, K; Zhu, SY; Menshchikova, TV; Rusinov, IP; Korostelev, VO; Miyamoto, K; Okuda, T; Miyashita, T; Wang, XX; Ishida, Y; Sumida, K; Schwier, EF; Ye, M; Aliev, ZS; Babanly, MB; Amiraslanov, IR; Chulkov, EV; Kokh, KA; Tereshchenko, OE; Shi

ACS NANO
2020
VL / 14 - BP / 9059 - EP / 9065
abstract
Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.

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PROYECTO FINANCIADO POR PLAN NACIONAL DE INVESTIGACIÓN AGENCIA ESTATAL DE INVESTIGACIÓN, MINISTERIO DE CIENCIA E INNOVACIÓN. PID2019-109127RB-I00