Among metamagnetic materials, FeRh alloys are technologically appealing due to their uncommon antiferromagnetic-to-ferromagnetic metamagnetic transition which occurs at a temperature T-star just above room temperature. Here, a controlled increase of T-star (Delta T-star similar to 20 degrees C) is induced in pre-selected regions of FeRh films via mechanical strain nanopatterning. Compressive stresses generated at the vicinity of predefined nanoindentation imprints cause a local reduction of the FeRh crystallographic unit cell parameter, which leads to an increase of T-star in these confined micro-/nanometric areas. This enhances the stability of the antiferromagnetic phase in these localized regions. Remarkably, generation of periodic arrays of nanopatterned features also allows modifying the overall magnetic and electric transport properties across large areas of the FeRh films. This approach is highly appealing for the design of new memory architectures or other AFM-spintronic devices.